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WTE
POWER SEMICONDUCTORS
HER501 – HER508
Pb
5.0A ULTRAFAST DIODE
Features
! ! ! ! ! Diffused Jun...
www.DataSheet4U.com
WTE
POWER SEMICONDUCTORS
HER501 – HER508
Pb
5.0A ULTRAFAST DIODE
Features
! ! ! ! ! Diffused Junction Low Forward
Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A
Mechanical Data
! ! ! ! ! ! ! Case: DO-201AD, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 1.2 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 D
DO-201AD Dim Min Max 25.4 — A 7.20 9.50 B 1.20 1.30 C 4.80 5.30 D All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. HER 501 50 35 HER 502 100 70
@TA=25°C unless otherwise specified
Characteristic Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage RMS Reverse
Voltage Average Rectified Output Current (Note 1) @TA = 55°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward
Voltage Peak Reverse Current At Rated DC Blocking
Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range @IF = 5.0A @TA = 25°C @TA = 100°C
Symbol VRRM VRWM VR VR(RMS) IO
HER 503 200 140
HER 504 300 210 5.0
HER 505 400 280
HER 506 600 420
HER 507 800 560
HER 508 1000 700
Unit
V V A
...