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HER507

EIC discrete Semiconductors

HIGH EFFICIENT RECTIFIER DIODES

HER501 - HER508 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * * High current capability High surge current...


EIC discrete Semiconductors

HER507

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HER501 - HER508 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 5.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) HER 501 50 35 50 HER 502 100 70 100 HER 503 200 140 200 HER 504 300 210 300 5.0 HER 505 400 280 400 HER 506 600 420 600 HER 507 800 560 800 HER 508 1000 700 1000 UNIT V V V A ...




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