HECX591

REPLACEMENT TYPE : FCX591 FEATURES  Power Dissipation HECX591(PNP) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -80 Collector-Emitter Voltage VCEO -60 Emitter-Base Voltage VEBO -5 Collector Current-Continuous IC -1 Collector Power Dissipation PC 0.5 Junction Temperature TJ 150 Storage Temperature Tstg -65~150 Unit V V V A W °C °C SOT-89 MARKING:P1 1:BASE 2:COLLECTOR 3:EMITTER ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage VCBO VCEO VEBO ICBO IEBO ICES hFE（1） hFE（2） hFE（3） hFE（4） VCE(sat) IC=-100uA,IE=0 IC=-10mA,IB=0 IE=-100uA,IC=0 VCB=-60V,IE=0 VEB=-4V,IC=0 VCES=-60 ...