HEC4375

REPLACEMENT TYPE : 2SC4375 FEATURES  Small Flat Package  Low Collector- Emitter Saturation Voltage HEC4375(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 30 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 1.5 Collector Power Dissipation PC 500 Thermal Resistance From Junction to Ambient RθJA 250 Junction Temperature TJ 150 Storage Temperature Tstg -55~+150 Unit V V V A mW °C/W °C °C SOT-89 1:BASE 2:COLLECTOR 3:EMITTER ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=1mA,IE=0 Collector-Emitter Breakdown Voltage VCEO IC=10mA,IB=0 Emitter-Base Breakdown Voltage VEBO IE=1mA,IC=0 Collector Cut-off Current ICBO VCB=30V,IE=0 Emitter Cut-off Current IEBO VEB=5V,IC=0 DC Current Gain hFE VCE=2V,IC=500mA Collector-Emitter Satura...