REPLACEMENT TYPE :2SB1119
FEATURES Low Collector-Emitter Saturation Voltage VCE(sat) Satisfactory Operation Perform...
REPLACEMENT TYPE :2SB1119
FEATURES Low Collector-Emitter Saturation
Voltage VCE(sat) Satisfactory Operation Performances at High Efficiency with the
Low
Voltage Power Supply.
MAXIMUMRATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base
Voltage
VCBO
-25
Collector-Emitter
Voltage
VCEO
-25
Emitter-Base
Voltage
VEBO
-5
Collector Current-Continuous
IC
-1
Collector Power Dissipation
PT 500
Junction Temperature
TJ 150
Storage Temperature
Tstg -55to+150
Unit V V V A
mW °C °C
HEB1119(PNP)
GENERAL PURPOSE TRANSISTOR
SOT-89 MARKING: BB 1: BASE 2:COLLECTOR 3:EMITTER
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat)
IC=-10uA,IE=0 IC=-1mA,IB=0 ...
