HE8812SG

www.DataSheet4U.com HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features High efficiency and high output power Package Type HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 40 840 — — — — — — Typ — 870 50 — — 30 10 10 Max — 900 60 2.5 100 — — — Unit mW nm nm V µA pF ns ns Test Conditions IF = 200 mA IF = 200 mA IF = 200 mA IF = 200 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA Rev.1, Jan. 2003, page 2 of 6 HE8812SG Typical Characteristic Curves Optical Output Power vs. Forward Current Optical output power, PO (mW) Forward Current vs. Forward Voltage 250 Forward current, IF (mA) 60 50 40 30 20 10 0 0 50 100 150 200 250 TC = −20°C 0°C 25°C 40°C 60°C 200 150 TC = −20°C 100 50 25°C 60°C 0 Forward current, IF (mA) 0.5 1.0 1.5 2.0 Forward voltage, VF (V) 2.5 Spectral Distribution 100 Relative radiation intensity (%) Pulse Response Current p...