HE7601SG

www.DataSheet4U.com HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.2 Mar. 2005 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features High efficiency and high output power Package Type HE7601SG: SG1 Internal Circuit 1 2 HE7601SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 30 740 — — — — — — Typ — 770 50 — — 30 10 10 Max — 800 60 2.5 100 — — — Unit mW nm nm V µA pF ns ns Test Conditions IF = 200 mA IF = 200 mA IF = 200 mA IF = 200 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA Rev.2, Mar. 2005, page 2 of 6 HE7601SG Typical Characteristic Curves Optical Output Power vs. Forward Current 50 Optical output power, PO (mW) Forward Current vs. Forward Voltage 250 Forward current, IF (mA) TC = −20°C 40 25°C 30 20 10 60°C 0 0 50 100 150 200 250 Forward current, IF (mA) 0°C 40°C 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 Forward voltage, VF (V) TC = −20°C 25°C 60°C Spectral Distribution Relative radiation intensity (%) Pulse Response Current pulse TC = 25°C Relative int...