HCU7N70S
HCU7N70S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Te...
HCU7N70S
HCU7N70S
700V N-Channel Super Junction
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ7\S#9GS=10V 100% Avalanche Tested
Sep 2014
BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5.0 A
I-PAK
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Static AC (f>1 Hz)
700 5.0 3.2 13.0 ρ20 ρ30
EAS IAR EAR dv/dt
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
(Note 2) (Note 1) (Note 1) (Note 3)
40 1.2 0.1 50
PD TJ, TSTG
TL
Power Dissipatio...