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HCS20NT60V
N-Channel MOSFET
Description
HCS20NT60V Apr 2014 HCS20NT60V 600V N-Channel Super Junction
MOSFET
BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating A...
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