HCP12NK65V
Apr 2014
HCP12NK65V
650V N-Channel Super Junction MOSFET
BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A
FEA...
HCP12NK65V
Apr 2014
HCP12NK65V
650V N-Channel Super Junction
MOSFET
BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested RoHS Compliant
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 12 7.4 36 ρ30 200 6 0.6 4.5
PD
Power Dissipation (TC = 25...