HCD80R650E Super Junction MOSFET
March 2017
HCD80R650E
800V N-Channel Super Junction MOSFET
Features
Very Low FOM (...
HCD80R650E Super Junction
MOSFET
March 2017
HCD80R650E
800V N-Channel Super Junction
MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 850 8 0.65 12
Unit V A Ω nC
Application
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters
Package & Internal Circuit
D-PAK
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS dv/dt dv/dt PD TJ, TSTG
TL
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…640V Reverse diode dv/dt, VDS=0…640V, IDS≤ID Power Dissipation (TC...
