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HBR3045

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR3045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15)A 45V 175 ℃ 0.63V (@...


Jilin Sino

HBR3045

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R SCHOTTKY BARRIER DIODE HBR3045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15)A 45V 175 ℃ 0.63V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22O z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-220HF TO-22OF TO-3PB ORDER MESSAGE Order codes Marking Package HBR3045Z HBR3045 TO-220 HBR3045ZR HBR3045 TO-220 HBR3045F HBR3045 TO-220F HBR3045FR HBR3045 TO-220F HBR3045HF HBR3045 TO-220HF HBR3045HFR HBR3045 TO-220HF HBR3045AB HBR3045 TO-3PB HBR3045ABR HBR3045 TO-3PB Halogen Free NO YES NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 5.20 g(typ) 5.20 g(typ) (Rev.):201003H 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220, TO-3PB) TC=125℃ (TO-220F TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR3045 Value 45 Unit V 45 V 30 A 15 275 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERIS...




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