w Features w w • Low on-resistance
HAT3004R m o c . Silicon N Channel U / P Channel Power MOS FET 4 High t Speed Power ...
w Features w w Low on-resistance
HAT3004R m o c . Silicon N Channel U / P Channel Power MOS FET 4 High t Speed Power Switching e e h S a ADE-208-500I (Z) at 10th. Edition D Aug. 1997 .
Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
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7 8 D D
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34 1 2
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
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HAT3004R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg
Note2 Note3 Note1
Unit Pch –30 ±20 –3.5 –28 –3.5 V V A A A W W °C °C
30 ±20 5.5 44 5.5 2 3 150
–55 to +150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
2
HAT3004R
Electrical Characteristics (N channel) (Ta = 25°C)
Item Symbol Min 30 ±20 — — 1.0 — — 3.5 — — — — — — — — — Typ — — — — — 0.050 0.078 5.5 310 220 100 17 190 25 60 0.9 50 Max — — ±10 10 2.0 0.065 0.11 — — — — — — — — 1.4 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 5.5A, VGS = 0 Note4 IF = 5.5A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±...
