HAT2244WP

HAT2244WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) Outline Preliminary Datasheet REJ03G1549-0410 Rev.4.10 May 13, 2010 RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25°C, Rg  50  3. Tc = 25°C S SS 1 23 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 80 ±20 30 120 30 25 83 25 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W C C REJ03G1549-0410 Rev.4.10 May 13, 2010 Page 1 of 7 HAT2244WP Preliminary Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 80 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 0.8 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 42 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total g...