HAT2220R

HAT2220R Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1572-0500 Rev.5.00 Jul 20, 2007 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current VDSS VGSS ID Note1 ID(pulse)Note2 450 ±30 0.7 2.1 Body-drain diode reverse drain current IDR 0.7 Avalanche current IAP Note3 0.7 Channel dissipation Pch Note4 2 Channel dissipation Pch Note5 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 1 s 2. PW ≤ 10 µs, duty cycle ≤ 1% 3. STch = 25 °C, Tch ≤ 150 °C 4. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 5. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A A W W °C °C REJ03G1572-0500 Rev.5.00 Jul 20, 2007 Page 1 of 3 HAT2220R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) 450 — — 3.0 0.55 — — — — — 0.95 5.5 — 1 ±0....