HAT2173N

HAT2173N Silicon N Channel Power MOS FET Power Switching Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 2XXX 8(D) 7(D) 6(D) 5(D) 4 G 5678 DDDD SSS 12 3 REJ03G1684-0100 Rev.1.00 May 28, 2008 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 100 ±20 25 100 25 25 62.5 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 1 of 7 HAT2173N Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time ...