HAT2173H
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 8 V gate drive • ...
HAT2173H
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 8 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 12 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
5 D
4 G
SSS 123
REJ03G0030-0200 Rev.2.00
Sep 26, 2005
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C
Tch
Tstg
Ratings 100 ±20 25 100 25 25 62.5 30 4.17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C/W °C °C
Rev.2.00 Sep 26, 2005 page 1 of 7
HAT2173H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown
voltage V(BR)DSS 100
Gate to source breakdown
voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
Zero gate
voltage drain current
IDSS
—
Gate to source cutoff
voltage
VGS(off)
4.0
Static drain to source on state resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
27
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate resistance
Rg
—
Total gate char...