HAT2170H
Silicon N Channel MOS FET Power Switching
Features
High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 3.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
4 G
Absolute Maximum Ratings
Item Drain to source voltage Gate to s...
