HAT2105T
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive ...
HAT2105T
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance Capable of 4 V gate drive High density mounting
Outline
RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8
)
87 6 5
123 4
1
8
D
D
4
5
G
G
S3
MOS1
S6
MOS2
REJ03G0384-0200 Rev.2.00
Aug 06, 2007
1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
200
Gate to source voltage
VGSS
±15
Drain current Drain peak current
ID
0.5
ID (pulse)Note1
2
Body-drain diode reverse drain current
IDR
0.5
Channel dissipation
PchNote 2
1
PchNote 3
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit V V A A A W W
°C °C
REJ03G0384-0200 Rev.2.00 Aug 06, 2007 Page 1 of 3
HAT2105T
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Notes: 4. Pulse test
Symbol V(BR)DSS V(BR)GSS...