H926

PNP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H926 █ POWER SUPPLIES，RELAY DRIVERS， LAMP DRIVERS，ELECTRICAL EQUIPMENT █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… -55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………750mW VCBO——Collector-Base Voltage………………………………-30V VCEO——Collector-Emitter Voltage……………………………-25V V EBO —— Emitter-Base Voltage ……………………………… -6V I C —— Collector Current …………………………………… -2A TO-92 1―Emitter，E 2―Collector， C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min http://www.DataSheet4U.net/ Typ Max Unit Test Conditions BVCBO BVCEO BVEBO HFE(1) HFE(2) VCE(sat) VBE(sat) ICBO IEBO fT Cob -30 -25 -6 100 65 130 -0.35 -0.85 -0.6 -1.2 -100 -100 150 32 560 V V V IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA，IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-1.5A * DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current V V nA nA MHz pF IC=-1.5A, IB=-75mA * IC=-1.5A, IB=-75mA * VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-50mA VCB=-10V, IE=0，f=1MHz Emitter Cut-off Current Current Gain-Bandwidth Product Output Capacitance * pulse █ hFE Classification R 100—200 S 140—280 T 200—400 U 280—560 datasheet pdf - http://www.DataSheet4U.net/ Shantou Huashan Electronic Devices Co.,Ltd. H926 ht...