H7N0307AB

H7N0307AB Silicon N Channel MOS FET High Speed Power Switching ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features Low on-resistance RDS(on) = 4.6 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Frange) 3. Source H7N0307AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Note 2 Note 1 Ratings 30 ±20 60 240 60 90 1.39 150 –55 to +150 Unit V V A A A W °C/W °C °C θch-c Tch Tstg Rev.1, Aug. 2002, page 2 of 10 H7N0307AB Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF 40 — — — — — — — — — — — — Typ — — — — — 4.6 8.0 65 2500 650 350 40 7 8 20 300 70 20 0.92 60 Max — — ±10 10 2.5 5.8 11.5 — — — — — — — — — — — — — µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/ dt = 50 A/µs Unit V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 30 A, VGS = 10 V ID = 30 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 60 A VGS = 10 V, ID = 30 A RL =0.33 Ω Rg = 4.7 Ω ID = 30 A, VGS =...