www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200610 Issued Date : 2006.06.01 Revised Date : ...
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200610 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4
H6968CTS
Dual N-Channel Enhancement-Mode
MOSFET (20V, 6.5A) (Battery Switch, ESD Protected)
8 7 6 5
8-Lead Plastic TSSOP-8 Package Code: TS H6968CTS Symbol & Pin Assignment Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain
Features
RDS(on)<32mΩ@VGS=2.5V, ID=5.5A RDS(on)<24mΩ@VGS=4.5V, ID=6.5A Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Li ion Battery Packs Use Designed for Battery Switch Appliactions ESD Protected
Q2 Q1
1
2
3
4
Absolute Maximum Ratings (T =25 C, unless otherwise noted)
o A
Symbol VDS VGS ID IDM PD Tj, Tstg RθJA ESD Drain-Source
Voltage Gate-Source
Voltage Drain Current (Continuous) Drain Current (Pulsed)
*1
Parameter
Ratings 20 ±12 6.5 30
Units V V A A W W °C °C/W V
Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75oC Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) ESD Protect on Gate and Source
*2
o
1.5 0.96 -55 to +150 83 2000
*1: Maximum DC current limited by the package under the ambient condition at room temperature. *2: 1-in2 2oz Cu PCB board
H6968CTS
HSMC Product Specification
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol Static B...