H5N5006LD

H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline LDPAK G w w w a .D D S S ta 1 2 3 e h 1 2 U 4 t e 4 4 .c m o Rev.0 Aug.2002 4 3 1 2 H5N5006LS 3 H5N5006LD H5N5006LM 1. Gate 2. Drain 3. Source 4. Drain w w w .D at h S a t e e 4U . m o c H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 Note 1 Value 500 ±30 3.5 14 3.5 3.5 50 2.5 150 –55 to +150 Unit V V A A A A W °C/W °C °C Pch Note 2 θch-c Tch Tstg Rev.0, Aug. 2002, page 2 of 12 H5N5006LD, H5N5006LS, H5N5006LM Electrical Characteristics (Ta = 25°C) Item Symbol Min 500 — — 3.0 1.8 — — — — — — — — — — — — — — Typ — — — — 3.0 2.5 365 35 8 20 13 48 14 14 2 8 0.85 280 0.8 Max — 1 ±0.1 4.5 — 3.0 — — — — — — — — — — 1.3 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.75 A, VDS = 10 V Note ID = 1.75 A, VGS = 10 V Note VDS = 25 V VGS = 0 f ...