H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features
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H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features
Low on-resistance: R DS(on) = 2.5 typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings
Outline
TO-220FM
w
w
.D w
G
t a
D S
S a
e h
3
t e
U 4
.c
m o
1 2
1. Gate 2. Drain 3. Source
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
H5N5006FM
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 3. Tch 150°C Symbol VDSS VGSS ID ID
Note1 (pulse)
Ratings 500 ±30 3 12 3
Unit V V A A A A A W °C/W °C °C
I DR I DR
Note1 (pulse)
12 3 25 5.0 150 –55 to +150
I AP Note3 Pch
Note2
θ ch-c Tch Tstg
2
H5N5006FM
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown
voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 500 — — 3.0 — 1.5 — — — — — — — — — — — — — Typ — — — — 2.5 2.5 365 35 8 20 12 48 15 14 2 8 0.85 270 0.8 Max — ±0.1 1 4.5 3.0 — — — — — — — — — — — 1.3 — — S pF pF pF ns ns ns ns nC nC nC V ns µC Unit V µA µA V Test Conditions I D = 10 ...
