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H5N2901FN
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0372-0100Z Rev.1.00 May.28.200...
www.DataSheet4U.com
H5N2901FN
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0372-0100Z Rev.1.00 May.28.2004
Features
Low on-resistance Low leakage current High speed switching
Outline
TO-220FN
D
G
1. Gate 2. Drain 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source
voltage Gate to Source
voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 290 ±30 18 72 18 72 6 2.1 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C
Rev.1.00, May.28.2004, page 1 of 7
H5N2901FN
Electrical Characteristics
(Ta = 25°C)
Item Drain to Source breakdown
voltage Zero Gate
voltage drain current Gate to Source leak current Gate to Source cutoff
voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward
voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS ...