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H5N2509P
Silicon N-Channel MOSFET
Description
H5N2509P Silicon N Channel
MOSFET
High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar. 2001 Features Low on-resistance : RDS(on) = 0.053 Ω typ. Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) Low gate charge : Qg = 110 ...
Hitachi
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