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Manufacture Part Number Description PDF
Hitachi
Hitachi
H5N2509P Silicon N Channel MOSFET
H5N2509P
Silicon N Channel MOSFET High Speed Power Switching

ADE-208-1378 (Z) Target Specification 1st. Edition
Mar. 2001

Features

• Low on-resistance : RDS(on) = 0.053 Ω typ.

• Low leakage 
H5N2509P pdf
Renesas
Renesas
H5N2509P Silicon N Channel MOS FET
H5N2509P
Silicon N Channel MOS FET High Speed Power Switching

Features
• Low on-resistance: R DS (on) = 0.053 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High
H5N2509P pdf





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