H5N2505DL, H5N2505DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1107-0300 Rev.3.00 Oct 16, 2006
Feature...
H5N2505DL, H5N2505DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1107-0300 Rev.3.00 Oct 16, 2006
Features
Low on-resistance Low drive current www.DataSheet4U.com High speed switching Low gate change Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) )
G 1 2
3 S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Value 250 ±30 5 20 5 20 5 25 5 150 –55 to +150 Unit V V A A A A A W °C/W °C °C
Rev.3.00 Oct 16, 2006 page 1 of 7
H5N2505DL, H5N2505DS
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown
voltage Zero gate
voltage drain current Gate to source leak current Gate to source cutoff
voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge www.DataSheet4U.com Gate to source charge Gate to drain charge Turn-on delay time Rise time Tur...