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H5N2503P

Renesas Technology
Part Number H5N2503P
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07,...
Datasheet PDF File H5N2503P PDF File

H5N2503P
H5N2503P

Overview
H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.
2.
00 Sep 07, 2005 Features www.
DataSheet4U.
com • Low • Low on-resistance: R DS (on) = 0.
04 Ω typ.
leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1.
Gate 2.
Drain (Flange) 3.
Source 1 2 3 S Rev.
2.
00 Sep 07, 2005 page 1 of 6 H5N2503P Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain curren...


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