H5N2501LD

H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features Low on-resistance Low leakage current www.DataSheet4U.com High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 4 RENESAS Package code: PRSS0004AE-C (Package name LDPAK(S)-(2)) 4 1 1 2 3 1 2 2 H5N2501LS 3 3 H5N2501LD D H5N2501LM G 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP Pch Note2 Tch Tstg Note3 Ratings 250 ±30 18 72 18 18 75 150 –55 to +150 Unit V V A A A A W °C °C Rev.2.00, Jul.21.2005, page 1 of 4 H5N2501LD, H5N2501LS, H5N2501LM Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance www.DataSheet4U.com Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain ...