isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE =60-200@ IC= 1A ·Low Collector Saturation Voltage ...
isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE =60-200@ IC= 1A ·Low Collector Saturation
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base
Voltage
100
VCEO
Collector-Emitter
Voltage
80
VEBO
Emitter-Base
Voltage
5
IC
Collector Current-Continuous
4
ICM
Collector Current-Peak
8
PC
Collector Power Dissipation @ TC=25℃
40
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 5.0 ℃/W
H1061
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE=1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On
Voltage
IC= 1.0A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 0.1A; VCE= 4V
COB
Output Capacitance
IE=0; VCB= 20V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
H1061
MIN TYP. M...