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GTT8209E

Part Number	GTT8209E
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 17, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/08/08 REVISED DATE : GTT8209E N-CHANNEL ENHANCEMENT MODE...
Datasheet	GTT8209E PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/08/08 REVISED DATE : GTT8209E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 21m 7A The GTT8209E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.
The GTT8209E is universally used for all commercial-industrial applications.
Description * Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF.
A A1 A2 c D E E1 Millimeter Min.
Max.
1.
10 MAX.
0 0.
10 0.
70 1.
00 0.
12 REF.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 REF.
L L1 b e e1 Millimeter Min.
Max.
0.
45 REF.
0.
60 REF.
0° 10° 0.
30 0.
50 0.
95 REF.
1.
90 REF.
Absolute Maxim...

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