www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B
GTT8205S
N-CHANNEL ENHAN...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B
GTT8205S
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
20V 28m 6A
The GTT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications. * Low on-resistance *Capable of 2.5V gate drive *Low drive current
Description
Features
Package Dimensions
REF. A A1 A2 c D E E1
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 20 ±8 6 4.8 20 1.14 0.01 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-a
Value 110
Unit /W
GTT8205S
Page: 1/4
ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown
Voltage
Breakdown
Voltage Temperature Coefficient
unless otherwise specified)
Min. 20 0.5 Typ. 0.03 20 23 4.5 7 30 70 40 65 1035 320 150 Max. 1.5 ±...