GTT2610

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/06/13 REVISED DATE : GTT2610 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 90m 3A The GTT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2610 is universally used for all commercial-industrial applications. Description Features *Simple Drive Requirement *Small Package Outline Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V 3 Continuous Drain Current , VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 60 ±20 3.0 2.3 10 2 0.016 -55 ~ +150 Ratings 62.5 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GTT2610 Page: 1/4 ISSUED DATE :2006/06/13 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 60 1.0 Typ. 0.05 5.0 6 1.6 3 6 5 16 3 490 55 40 Max. 3.0 ±100 10 25 90 120 10 780 pF ns nC Unit V V/...