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GT60N322

Part Number	GT60N322
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Mar 17, 2008
Datasheet	GT60N322 PDF File

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GT60N322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT60N322
Voltage Resonance Inverter Switching Application

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• Enhancement mode type High speed : tf = 0.11 μs (typ.) (IC = 60 A) Low saturation volt...

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