GT50J327

www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.19 µs (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) FRD included between emitter and collector Fourth generation IGBT TO-3P(N) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 29 50 100 20 40 56 140 150 −55 to 150 Unit V V A A A 1.Gate 2.Collector(heatsink) 3.Emitter JEDEC JEITA TOSHIBA   2-16C1C W °C °C Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.89 2.7 Unit °C/W °C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) Gate Emitter TOSHIBA GT50J327 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2005-02-09 GT50J327 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time ...