GT35J321
www.DataSheet4U.com TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
GT35J321
Fourth-generation IGBT Current Resonance Inverter Switching Applications
z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A) FRD included between emitter and collector Toshiba...
