N-Channel IGBT
Description
GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
l The 3rd Generation
l Enhancement−Mode
l High Speed
: tf = 0.30µs (Max.)
l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
l FRD included between Emitter and Collector
MAXIMUM RATINGS (Ta = 25°C)
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