GT2605

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GT2605 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 80m -4.0A The GT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT2605 is universally used for all commercial-industrial applications. Description *Fast Switching Characteristic *Lower Gate Charge *Small Footprint & Low Profile Package Features Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 20 -4 -3.3 -20 2 0.016 -55 ~ +150 Ratings 62.5 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 ISSUED DATE :2005/05/18 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -30 -1.0 Typ. -0.02 6 5.5 1 2.6 7 6 18 4 400 90 30 Max. -3.0 100 -1 -25 80 120 8.8 640 pF ns nC Unit V V/ V S nA...