www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/05/06 REVISED DATE :
GT2602
N-CHANNEL ENHANCEMENT MODE P...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/05/06 REVISED DATE :
GT2602
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
20V 34m 6.3A
The GT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT2602 is universally used for all commercial-industrial applications.
Description
*Capable of 2.5V gate drive *Low on-resistance
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10°
REF. G H I J K L
Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 20 12 6.3 5 30 2 0.016 -55 ~ +150 Ratings 62.5
Unit V V A A A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W
1/4
ISSUED DATE :2005/05/06 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown
Voltage
Breakdown
Voltage Temperature Coefficient
Unless otherwise specified)
Min. 20 0.5 Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111 Max. 100 1 10 30 34 50 90 16 1085 pF ns nC m Unit V V/ V S nA uA uA Test Condition...