GT10J321

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switching Applications ●　 ●　 ●　 ●　 ●　 The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) ●　 :t High speed f=0.03μs(typ.) ●　 Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range DC 1ms DC 1ms Symbol Ratings Unit VCES VGES IC ICP IF IFM PC Tj Tstg 600 ±20 10 20 10 20 29 150 -55～150 V V A A W ℃ ℃ 2001-6- 1/6 TOSHIBA Preliminary Electrical Characteristics(Ta=25℃) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Symbol Test Condition Min GT10J321 Typ. Max ±500 Unit IGES ICES VGE(OFF) VCE(sat) Cies td(on) tr ton td(off) tf toff Eon Eoff VF trr Rth(j-c) Rth(j-c) VGE=±20V,VCE=0 VCE=600V,VGE=0 IC=1mA,VCE=5V IC=10A,VGE=15V VCE=10V,VGE=0,f=1MHz Inductive Load VCC=300V,IC=10A VGG=+15V,RG=68Ω (Note 1) (Note 2) 3.5 - 2...