GSS9926

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/05/27 REVISED DATE :2006/11/15E GSS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A Description The GSS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low drive current Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 1 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±8 6 4.8 20 2 0.016 -55 ~ +150 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 62.5 Unit /W GSS9926 Page: 1/4 ISSUED DATE :2004/05/27 REVISED DATE :2006/11/15E Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.03 20 23 4.5 7 30 70 40 65 1035 320 150 Max. 1.2 ±100 1 25 28 38 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference ...