GSS9922E

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/06 REVISED DATE : GSS9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 20m 6.8A The GSS9922E provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , [email protected] Continuous Drain Current , [email protected] Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±12 6.8 5.4 25 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 62.5 Unit /W GSS9922E Page: 1/4 ISSUED DATE :2006/04/06 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.05 22 25 3 9 11 12 47 23 1730 280 240 2.2 Max. 1.2 ±10 10 100 20 25 40 2770 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=25...