GSMBTA64

www.DataSheet4U.com ISSUED DATE :2005/08/31 REVISED DATE : G S M B TA 6 4 Description Features PNP SILICON TRANSISTOR The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA. High D.C. Current Gain Complementary to GSMBTA14 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD ,unless otherwise noted) Max. -100 -100 -1.5 -2 MHz Unit V V V nA nA V V IC=-100uA, IE=0 IC=-100uA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-10V, IC=0 IC=-100mA, IB=-0.1mA VCE=-5V, IC=-100mA VCE=-5V, IC=-10mA VCE=-5V, IC=-100mA VCE=-5V, IC=-100mA, f=100MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Ratings +150 -55~+150 -30 -30 -10 -500 225 Unit V V V mA mW Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. -30 -30 -10 10K 20K 125 Typ. - Test Conditions GSMBTA56 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the ri...