GSMBT4401

www.DataSheet4U.com CORPORATION G SM BT 4 4 0 1 Description Features Complementary to GSMBT4403 High DC Current Gain: 100-300 at 150mA The GSMBT4401 is designed for general purpose switching and amplifier applications. ISSUED DATE :2004/12/20 REVISED DATE : NP N EP ITAX I AL PL ANAR T RANSI STOR Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Base Voltage at Ta=25 Collector Current at Ta=25 Total Power Dissipation at Ta=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 60 40 6 600 250 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob at Ta = 25 Min. 60 40 6 20 40 80 100 40 250 Typ. Max. 100 400 750 950 1.2 300 6.5 MHz pF Unit V V V nA mV mV mV V IC=100uA IC=1mA IE=10uA VCE=35V, V BE= 0.4V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC =20mA, f=100MHz VCB=5V, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/12/20 REVISED DATE : Imp...