GSMBT4076

www.DataSheet4U.com ISSUED DATE :2005/07/22 REVISED DATE : GSM BT 4076 Description Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT4076 is designed for general purpose switching and amplifier applications. Excellent hFE Linearity : hFE2=25 (Min.) @VCE=6v, IC=400mA Complementary to GSMBT2015 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PD Ratings +150 -55~+150 35 30 5 500 50 250 Unit V V V mA mA mW Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 35 30 5 70 25 250 Typ. - ) Max. 100 100 250 1.2 240 6.5 Unit V V V nA nA mV V Test Conditions IC=100uA , IE=0 IC=1mA, IB=0 IE=10uA ,IC=0 VCB=35V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=1V, IC=100mA VCE=6V, IC=400mA VCE=10V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% MHz pF Classification Of hFE Rank hFE1 Range hFE2 Range WO 70 - 140 Min. 25 WY 120 - 240 Min. 40 1/2 ISSUED DATE :2005/07/22 REVISED DATE : Characteristics Curve Important Notice: All rights are re...