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ISSUED DATE :2004/12/08 REVISED DATE :
GSM BT 1015
Description
P NP E PITAXI AL P L ANAR T RANS IS...
www.DataSheet4U.com
ISSUED DATE :2004/12/08 REVISED DATE :
GSM BT 1015
Description
P NP E PITAXI AL P L ANAR T RANS ISTO R
The GSMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -50 -50 -5 -150 225 V V V mA mW Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob
at Ta = 25
Min. -50 -50 -5 120 25 80 Typ. Max. -100 -100 -300 -1.1 700 7 MHz pF Unit V V V nA nA mV V IC=-100uA IC=-1mA IE=-10uA VCB=-50V VEB=-5V IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz,IE=0 * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions
Classification Of hFE1
Rank Range A4Y 120-140 A4G 200-400 A4B 350-700
1/2
ISSUED DATE :2004/12/08 REVISED DATE :
Characteristics Curve
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