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GSMBD2004

GTM

SWITCHING DIODE

www.DataSheet4U.com ISSUED DATE :2005/12/23 REVISED DATE : GSM BD2004 S U R F A C E M O U N T, S W I T C H I N G D I O ...


GTM

GSMBD2004

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www.DataSheet4U.com ISSUED DATE :2005/12/23 REVISED DATE : GSM BD2004 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 3 0 0 V, C U R R E N T 0 . 2 2 5 A Description The GSMBD2004 is designed for ultra high speed switching. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings (At TA = 25 Parameter Repetitive Peak Reverse Voltage Continuous reverse voltage RMS Reverse Voltage Forward Continuous Current Non-Repetitive Peak Forward surge Current @Tp =1.0us @Tp=1.0s Typical Junction Capacitance between Terminal (Note1) Max. Reverse Recovery Time (Note2) Power Dissipation Thermal Resistance Junction to Ambient Air Operation and Storage Temperature Range unless otherwise specified) Symbol VRRM VR(VRWM) VR(RMS) IFM IFSM CJ TRR PD R JA Ratings 300 240 170 225 4 1 5.0 50 350 357 -65 ~ +150 Unit V V V mA A pF nSec mW /W TJ, TSTG Electrical Characteristics (At TA = 25 Characteristics Reverse Breakdown Voltage Forward Voltage Symbol BVR VF Min. 300 Reverse Current IR - unless otherwise noted) Max. 0.85 1 1.25 100 100 Unit V V V V nA uA IR=100uA IF=20mA IF=100mA IF=225mA VR=240V, TA=25 VR=240V, TA=150 and recovery to IRR=-3mA. Test Conditions Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts. 2. Measured at applied forward current of 30mA, reverse curr...




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