20V N-Channel Enhancement Mode MOSFET
Product Description
GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Packages & Pin Assignments
GSM1024X7F (SOT-563)
Features
20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=4.
N-channel MOSFET
20V N-Channel Enhancement Mode MOSFET
Product Description
GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Packages & Pin Assignments
GSM1024X7F (SOT-563)
Features
20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-563 package design
Applications
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones,
Pagers
GSM1024
1 Source1 4 2 Gate1 5 3 Drain2 6
Source2 Gate2 Drain1
Ordering Information
GS P/N
GSM1024 P F
Package Code Pb Free Code
www.gs-power.com 1
Marking Information
Part Number
GSM1024X7F
Package
SOT-563
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
VDSS VGSS
ID
IDM IS
PD
TJ TSTG
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25ºC TA=70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation Operating Junction Temperature
TA=25ºC TA=70ºC
Storage Temperature Range
Part Marking
B
Typical
20 ±12 0.7 0.4 1.0 0.3 0.27 0.1.