GSD965

www.DataSheet4U.com CORPORATION GSD965 Description NPN EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B The GSD965 is designed for use as AF output amplifier and flash unit Package Dimensions D E S1 TO-92 A b1 SE A TING P LA NE L REF. A S1 b e1 e b C Millimeter Min. 4.45 1.02 0.36 0.36 0.36 Max. 4.7 0.51 0.76 0.51 REF. D E L e1 e Millimeter Min. 4.44 3.30 12.70 1.150 2.42 Max. 4.7 3.81 1.390 2.66 b1 C Absolute Maximum Ratings at Ta = 25 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Junction Temperature Storage Temperature Total Power Dissipation at Ta = 25 BVCBO BVCEO BVEBO IC IC Tj Tstg PD 40 20 7.0 5 8 +150 -55 ~ +150 0.75 W V V V A A Characteristics at Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 40 20 7 230 150 Typ. 0.35 150 Max. 0.1 0.1 1 800 50 MHz pF Unit V V V uA uA V IC=100uA IC=1mA IE=10uA VCB=60V VEB=7V IC=3A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Q Range 230-380 R 340-600 S 560-800 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notic...