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GSD882S

GTM

NPN EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com CORPORATION GSD882S Description Package Dimensions D E S1 ISSUED DATE :2004/09/13 REVISED DATE :20...


GTM

GSD882S

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Description
www.DataSheet4U.com CORPORATION GSD882S Description Package Dimensions D E S1 ISSUED DATE :2004/09/13 REVISED DATE :2004/11/29B P N P E P I TA X I A L P L A N A R T R A N S I S TO R The GSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver. TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Base Voltage at Ta=25 Collector Current at Ta=25 Total Power Dissipation at Ta=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 40 30 5.0 3.0 750 V V V A mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 FT Cob at Ta = 25 Min. 40 30 5 30 100 Typ. 90 45 Max. 1 1 0.5 2 500 MHz Pf Unit V V V uA uA V V IC=100uA ,IE=0 IC=1mA,IB=0 IE=10uA VCB=30V VEB=3V IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V,IE=0, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE2 Rank Range Q 100-200 P 160-320 E 250-500 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/09/13 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited w...




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